MARKING CODE |
PART No. Grade etc. |
MAKER | PACKAGE NAME |
MAKER PACKAGE NAME |
PIN COUNT |
etc. |
PA | CPH5701 | SANYO | SC-74A | CPH5 (2.8×2.9×0.9) |
5 | Small signal transistor+SBD (複合タイプ) > PNP+SBD. |
PA | CPH6701 | SANYO | SC-74 SOT-457 |
CPH6 (2.8×2.9×0.9) |
6 | Small signal transistor+SBD (複合タイプ) > PNP+SBD. |
PA | MA735 (MA2Q735) |
Panasonic | - | NMiniP2-J1 | 2 | Schottky barrier diode for high frequency rectification. Discontinued. |
PA | MA2Q735 (MA735) |
Panasonic | - | NMiniP2-J1 | 2 | Schottky barrier diode for high frequency rectification. Discontinued. |
pBC | BC847B/DG | NXP | - TO-236AB |
SOT23 | 3 | NPN general purpose transistor. Halogen free. |
pD5 | BCV63 Grade (110~800) |
NXP | - | SOT143B | 4 | NPN general purpose doble transistors. |
pD6 | BCV63B Grade (200~450) |
NXP | - | SOT143B | 4 | NPN general purpose doble transistors. |
PF | MA104 | Panasonic | - | New Mini Power Type (2-pin) |
2 | Silicon diode for high frequency rectifier. Discontinued. |
pG9 | BC847BW/DG | NXP | SC-70 | SOT323 | 3 | NPN general purpose transistor. Halogen free. |
PGA1 |
PGA-102+ | MINIC | SOT-89 SC-62 |
CASE STYLE: DF782 |
3(4) | Monolithic Amp. RoHS compliant. |
PJ | DZ27110 | Panasonic | - | SSSMini2-F4-B | 2 | Zener diode series for constant voltage. waveform clipper and surge absorption. Low noise type. |
PJ | DZ2J110 Grade Non rank (Vz=10.45~11.55) |
Panasonic | - | SMini2-F5-B | 2 | Zener diode series for constant voltage. waveform clipper and surge absorption. Low noise type. |
PJ | DZ2S110 Grade Non rank (Vz=10.45~11.55) |
Panasonic | - | SSMini2-F5-B | 2 | Zener diode series for constant voltage. waveform clipper and surge absorption. Low noise type. |
PJ | DZ4J110K | Panasonic | - | SMini4-F3-B | 4 | Zener diode series for constant voltage. waveform clipper and surge absorption. Low noise type. |
PJ1084 CM *** |
PJ1084CM | PROMAX | TO-263 | - | 4 | 5Amp Low dropout positive regulator |
PJ1084CM 2.5 *** |
PJ1084CM-2.5V | PROMAX | TO-263 | - | 4 | 5Amp Low dropout positive regulator |
PJ1084CM 3.3 *** |
PJ1084CM-3.3V | PROMAX | TO-263 | - | 4 | 5Amp Low dropout positive regulator |
PJ1117CW *** |
PJ1117CW-adj | PROMAX | SOT-223 | - | 4 | 1Amp Low dropout positive regulator |
PJ1117CW 2.5 *** |
PJ1117CW-2.5V | PROMAX | SOT-223 | - | 4 | 1Amp Low dropout positive regulator |
PJ1117CW 3.3 *** |
PJ1117CW-3.3V | PROMAX | SOT-223 | - | 4 | 1Amp Low dropout positive regulator |
PJ1117CW 5.0 *** |
PJ1117CW-5.0V | PROMAX | SOT-223 | - | 4 | 1Amp Low dropout positive regulator |
PL | RTF025N03 | ROHM | - | TUMT3 | 3 | 2.5V drive N-ch MOS FET for switching. |
pL3 ** or -L3 ** or WL3 ** or tL3 ** |
BAV23 | NXP | - TO-236AB (JEDEC) |
SOT23 | 3 | Dual high-voltage switching diodes. |
PM | RTF035N03 | ROHM | - | TUMT6 | 6 | 2.5V drive N-ch MOS FET for switching. |
PM | RTL035N03 | ROHM | - | TUMT6 | 6 | 2.5V drive N-ch MOS FET for switching. |
PN | BB190 | NXP | SC-76 | SOD323 | 2 | UHF variable capacitance diode. |
PN | RSF014N03 | ROHM | - | TUMT3 | 3 | 4V drive N-ch MOS FET for switching. |
PN | RW1E014SN | ROHM | - | WEMT6 | 6 | 4V drive N-ch MOS FET for switching. |
P*|O or (P|O) |
2SC2884 Grade O(100~200) |
TOSHIBA | SC-62 SOT-89 |
PW-Mini(4.6 x 4.2) (2-5K1A) |
3(4) | Bipolar NPN transistor for low power amp/audio frequency amp. Pb free. Complementary to 2SA1204. |
P*O or (PO) |
2SC2884 Grade O(100~200) |
TOSHIBA | SC-62 SOT-89 |
PW-Mini(4.6 x 4.2) (2-5K1A) |
3(4) | Bipolar NPN transistor for low frequency amp. Complementary to 2SA1204. |
PP | RTF015N03 | ROHM | - | TUMT3 | 3 | 2.5V drive N-ch MOS FET for switching. |
PP | MA2HD08 | Panasonic | - | HNMiniP2-J1 | 2 | Schottky barrier diode for high frequency rectification. Discontinued. |
PP4 *** |
SSM6P47NU | TOSHIBA | - | UDFN6(2.0 x 2.0) (2-2Y1A) |
6(8) | P-ch MOS FET for power management application. |
PP5 *** |
SSM6P49NU | TOSHIBA | - | UDFN6(2.0 x 2.0) (2-1Y1A) |
6(8) | P-ch MOS FET for power management application. |
PQ | 2SA2199 Grade Q (120~270) |
ROHM | - | VMN3 | 3 | Bipolar PNP transistor for small signal low frequency amp. Complementary to 2SC6114 |
PQ | 2SD0814 Grade P (90~155) |
Panasonic | SC-59 SC-59A TO-236 |
Mini Type(3-pin) | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PQ | 2SD1511 Grade Q (4000~10000) |
Panasonic | SC-62 | MiniP3-F1 | 3 | NPN transistor for low voltage power amp. Discontinued. Alternative the DSC7Q01 |
PQ | 2SD1511G Grade Q (4000~10000) |
Panasonic | SC-62 | MiniP3-F2 | 3 | NPN transistor for low voltage power amp. Discontinued. Alternative the DSC7Q01 |
PQ | MA2HD07 | Panasonic | - | HNMiniP2-J1 | 2 | Schottky barrier diode for high frequency rectification. Discontinued. |
PQ |
SSM6J212FE | TOSHIBA | - | ES6(1.6 x 1.6) (2-2N1J) |
6 | P-ch MOS FET for power management application. |
PR | 2SA2199 Grade R (180~390) |
ROHM | - | VMN3 | 3 | Bipolar PNP transistor for small signal low frequency amp. Complementary to 2SC6114 |
PR | 2SD0814 Grade Q (130~220) |
Panasonic | SC-59 SC-59A TO-236 |
Mini Type(3-pin) | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PR | 2SD1511 Grade R (8000~20000) |
Panasonic | SC-62 | MiniP3-F1 | 3 | NPN transistor for low voltage power amp. Discontinued. Alternative the DSC7Q01 |
PR | 2SD1511G Grade R (8000~20000) |
Panasonic | SC-62 | MiniP3-F2 | 3 | NPN transistor for low voltage power amp. Discontinued. Alternative the DSC7Q01 |
PR | 2SD1821 Grade R (130~230) |
Panasonic | SC-70 | SMini3-G1 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PR | 2SD2240 Grade R (130~220) |
Panasonic | SC-75 | SSMini3-G1 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PR | 2SD2240G Grade R (130~220) |
Panasonic | SC-89 | SSMini3-F3 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PR | 2SD2240J Grade R (130~220) |
Panasonic | SC-89 SOT-490 |
SSMini3-F1 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. Complementary to 2SB1463J |
PR | MA2HD09 | Panasonic | - | HNMiniP2-J1 | 2 | Schottky barrier diode for high frequency rectification. Discontinued. |
PS | 2SD0814 Grade R (185~330) |
Panasonic | SC-59 SC-59A TO-236 |
Mini Type(3-pin) | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PS | 2SD1511 Grade S (16000~40000) |
Panasonic | SC-62 | MiniP3-F1 | 3 | NPN transistor for low voltage power amp. Discontinued. Alternative the DSC7Q01 |
PS | 2SD1511G Grade S (16000~40000) |
Panasonic | SC-62 | MiniP3-F2 | 3 | NPN transistor for low voltage power amp. Discontinued. Alternative the DSC7Q01 |
PS | 2SD1821 Grade S (185~330) |
Panasonic | SC-70 | SMini3-G1 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PS | 2SD2240 Grade S (185~330) |
Panasonic | SC-75 | SSMini3-G1 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PS | 2SD2240G Grade S (185~330) |
Panasonic | SC-89 | SSMini3-F3 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. |
PS | 2SD2240J Grade S (185~330) |
Panasonic | SC-89 SOT-490 |
SSMini3-F1 | 3 | NPN transistor for high voltage resistance low frequency low noise amp. Discontinued. Complementary to 2SB1463J |
PS | RUF015N02 | ROHM | - | TUMT3 | 3 | 1.8V drive N-ch MOS FET for switching. |
PS | RW1C015UN | ROHM | - | WEMT6 | 6 | 1.5V drive N-ch MOS FET for switching. |
PS |
SSM6J213FE | TOSHIBA | - | ES6(1.6 x 1.6) (2-2N1J) |
6 | P-ch MOS FET for power management application. |
PT |
SSM6J214FE | TOSHIBA | - | ES6(1.6 x 1.6) (2-2N1J) |
6 | P-ch MOS FET for power management application. |
PU | RTQ020N05 | ROHM | - | TSMT6 | 6 | 2.5V drive N-ch MOS FET for switching. |
PU | DZ2J110 Grade M (Vz=10.73~11.28) |
Panasonic | - | SMini2-F5-B | 2 | Zener diode series for constant voltage. waveform clipper and surge absorption. Low noise type. |
PU | DZ2S110 Grade M (Vz=10.73~11.28) |
Panasonic | - | SSMini2-F5-B | 2 | Zener diode series for constant voltage. waveform clipper and surge absorption. Low noise type. |
PV | RTR030N05 | ROHM | - | TSMT3 | 3 | 2.5V drive N-ch MOS FET for switching. |
pV0 ** or WV0 ** or -V0 ** or tV0 ** |
BAV23A | NXP | - TO-236AB (JEDEC) |
SOT23 | 3 | Dual high-voltage switching diodes. |
pV3 ** | BAT54A | NXP | - TO-236AB (JEDEC) |
SOT23 | 3 | Schottky barrier diode. |
pV4 ** | BAT54S | NXP | - TO-236AB (JEDEC) |
SOT23 | 3 | Schottky barrier diode. |
pV5 ** or -V5 ** or WV5 ** or tV5 ** |
BAV23S | NXP | - TO-236AB (JEDEC) |
SOT23 | 3 | Dual high-voltage switching diodes. |
pV9 ** or -V9 ** or WV9 ** or tV9 ** |
BAV23C | NXP | - TO-236AB (JEDEC) |
SOT23 | 3 | Dual high-voltage switching diodes. |
PW | RTR025N05 | ROHM | - | TSMT3 | 3 | 2.5V drive N-ch MOS FET for switching. |
pW1 ** | BAT54C | NXP | - TO-236AB (JEDEC) |
SOT23 | 3 | Schottky barrier diode. |
PX | RSQ015N06 | ROHM | - | TSMT6 | 6 | 4V drive N-ch MOS FET for switching. |
PX | SSM3J36MFV | TOSHIBA | - | VESM(1.2 x 1.2) (2-1L1B) |
3 | P-ch MOS FET for power management switch applications. |
PY | RSR030N06 | ROHM | - | TSMT3 | 3 | 4V drive N-ch MOS FET for switching. |
PY | SSM3J56MFV | TOSHIBA | - | VESM(1.2 x 1.2) (2-1L1B) |
3 | P-ch MOS FET for load switching application. |
P*|Y or (P|Y) |
2SC2884 Grade Y(160~320) |
TOSHIBA | SC-62 SOT-89 |
PW-Mini(4.6 x 4.2) (2-5K1A) |
3(4) | Bipolar NPN transistor for low power amp/audio frequency amp. Pb free. Complementary to 2SA1204. |
P*Y or (PY) |
2SC2884 Grade Y(160~320) |
TOSHIBA | SC-62 SOT-89 |
PW-Mini(4.6 x 4.2) (2-5K1A) |
3(4) | Bipolar NPN transistor for low frequency amp. Complementary to 2SA1204. |
PZ | RSR020N06 | ROHM | - | TSMT3 | 3 | 4V drive N-ch MOS FET for switching. |
PZ | SSM3J35FS | TOSHIBA | - | SSM(1.6 x 1.6) (2-2H1B) |
3 | P-ch MOS FET for high speed switching. |
PZ | SSM3J35MFV | TOSHIBA | - | VESM(1.2 x 1.2) (2-1L1B) |
3 | P-ch MOS FET for high speed switching. |
PZ | SSM3J35MFV | TOSHIBA | - | VESM(1.2 x 1.2) (2-1L1B) |
3 | P-ch MOS FET for high speed switching. |