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LIST P(2)


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MARKING CODE LIST P(2)

* , ** , *** , ****,_=date code,Lot No. etc.
#=hfe rank.


MARKING
CODE
PART No.
Grade etc.
MAKER PACKAGE
NAME
MAKER
PACKAGE NAME
PIN
COUNT
etc.
PA CPH5701 SANYO SC-74A CPH5
(2.8×2.9×0.9)
5 Small signal transistor+SBD (複合タイプ) > PNP+SBD.
PA CPH6701 SANYO SC-74
SOT-457
CPH6
(2.8×2.9×0.9)
6 Small signal transistor+SBD (複合タイプ) > PNP+SBD.
PA MA735
(MA2Q735)
Panasonic - NMiniP2-J1 2 Schottky barrier diode for high frequency rectification.
Discontinued.
PA MA2Q735
(MA735)
Panasonic - NMiniP2-J1 2 Schottky barrier diode for high frequency rectification.
Discontinued.
pBC BC847B/DG NXP -
TO-236AB
SOT23 3 NPN general purpose transistor.
Halogen free.
pD5 BCV63
Grade (110~800)
NXP - SOT143B 4 NPN general purpose doble transistors.
pD6 BCV63B
Grade (200~450)
NXP - SOT143B 4 NPN general purpose doble transistors.
PF MA104 Panasonic - New Mini Power Type
(2-pin)
2 Silicon diode for high frequency rectifier.
Discontinued.
pG9 BC847BW/DG NXP SC-70 SOT323 3 NPN general purpose transistor.
Halogen free.
PGA1
PGA-102+ MINIC SOT-89
SC-62
CASE STYLE:
DF782
3(4) Monolithic Amp.
RoHS compliant.
PJ DZ27110 Panasonic - SSSMini2-F4-B 2 Zener diode series for constant voltage.
waveform clipper and surge absorption.
Low noise type.
PJ DZ2J110
Grade Non rank (Vz=10.45~11.55)
Panasonic - SMini2-F5-B 2 Zener diode series for constant voltage.
waveform clipper and surge absorption.
Low noise type.
PJ DZ2S110
Grade Non rank (Vz=10.45~11.55)
Panasonic - SSMini2-F5-B 2 Zener diode series for constant voltage.
waveform clipper and surge absorption.
Low noise type.
PJ DZ4J110K Panasonic - SMini4-F3-B 4 Zener diode series for constant voltage.
waveform clipper and surge absorption.
Low noise type.
PJ1084
CM ***
PJ1084CM PROMAX TO-263 - 4 5Amp Low dropout positive regulator
PJ1084CM
2.5 ***
PJ1084CM-2.5V PROMAX TO-263 - 4 5Amp Low dropout positive regulator
PJ1084CM
3.3 ***
PJ1084CM-3.3V PROMAX TO-263 - 4 5Amp Low dropout positive regulator
PJ1117CW
***
PJ1117CW-adj PROMAX SOT-223 - 4 1Amp Low dropout positive regulator
PJ1117CW
2.5 ***
PJ1117CW-2.5V PROMAX SOT-223 - 4 1Amp Low dropout positive regulator
PJ1117CW
3.3 ***
PJ1117CW-3.3V PROMAX SOT-223 - 4 1Amp Low dropout positive regulator
PJ1117CW
5.0 ***
PJ1117CW-5.0V PROMAX SOT-223 - 4 1Amp Low dropout positive regulator
PL RTF025N03 ROHM - TUMT3 3 2.5V drive N-ch MOS FET for switching.
pL3 **
or
-L3 **
or
WL3 **
or
tL3 **
BAV23 NXP -
TO-236AB
(JEDEC)
SOT23 3 Dual high-voltage switching diodes.
PM RTF035N03 ROHM - TUMT6 6 2.5V drive N-ch MOS FET for switching.
PM RTL035N03 ROHM - TUMT6 6 2.5V drive N-ch MOS FET for switching.
PN BB190 NXP SC-76 SOD323 2 UHF variable capacitance diode.
PN RSF014N03 ROHM - TUMT3 3 4V drive N-ch MOS FET for switching.
PN RW1E014SN ROHM - WEMT6 6 4V drive N-ch MOS FET for switching.
P*|O
or
(P|O)
2SC2884
Grade O(100~200)
TOSHIBA SC-62
SOT-89
PW-Mini(4.6 x 4.2)
(2-5K1A)
3(4) Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1204.
P*O
or
(PO)
2SC2884
Grade O(100~200)
TOSHIBA SC-62
SOT-89
PW-Mini(4.6 x 4.2)
(2-5K1A)
3(4) Bipolar NPN transistor for low frequency amp.
Complementary to 2SA1204.
PP RTF015N03 ROHM - TUMT3 3 2.5V drive N-ch MOS FET for switching.
PP MA2HD08 Panasonic - HNMiniP2-J1 2 Schottky barrier diode for high frequency rectification.
Discontinued.
PP4
***
SSM6P47NU TOSHIBA - UDFN6(2.0 x 2.0)
(2-2Y1A)
6(8) P-ch MOS FET for power management application.
PP5
***
SSM6P49NU TOSHIBA - UDFN6(2.0 x 2.0)
(2-1Y1A)
6(8) P-ch MOS FET for power management application.
PQ 2SA2199
Grade Q (120~270)
ROHM - VMN3 3 Bipolar PNP transistor for small signal low frequency amp.
Complementary to 2SC6114
PQ 2SD0814
Grade P (90~155)
Panasonic SC-59
SC-59A
TO-236
Mini Type(3-pin) 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PQ 2SD1511
Grade Q (4000~10000)
Panasonic SC-62 MiniP3-F1 3 NPN transistor for low voltage power amp.
Discontinued.
Alternative the DSC7Q01
PQ 2SD1511G
Grade Q (4000~10000)
Panasonic SC-62 MiniP3-F2 3 NPN transistor for low voltage power amp.
Discontinued.
Alternative the DSC7Q01
PQ MA2HD07 Panasonic - HNMiniP2-J1 2 Schottky barrier diode for high frequency rectification.
Discontinued.
PQ
SSM6J212FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)
6 P-ch MOS FET for power management application.
PR 2SA2199
Grade R (180~390)
ROHM - VMN3 3 Bipolar PNP transistor for small signal low frequency amp.
Complementary to 2SC6114
PR 2SD0814
Grade Q (130~220)
Panasonic SC-59
SC-59A
TO-236
Mini Type(3-pin) 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PR 2SD1511
Grade R (8000~20000)
Panasonic SC-62 MiniP3-F1 3 NPN transistor for low voltage power amp.
Discontinued.
Alternative the DSC7Q01
PR 2SD1511G
Grade R (8000~20000)
Panasonic SC-62 MiniP3-F2 3 NPN transistor for low voltage power amp.
Discontinued.
Alternative the DSC7Q01
PR 2SD1821
Grade R (130~230)
Panasonic SC-70 SMini3-G1 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PR 2SD2240
Grade R (130~220)
Panasonic SC-75 SSMini3-G1 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PR 2SD2240G
Grade R (130~220)
Panasonic SC-89 SSMini3-F3 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PR 2SD2240J
Grade R (130~220)
Panasonic SC-89
SOT-490
SSMini3-F1 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
Complementary to 2SB1463J
PR MA2HD09 Panasonic - HNMiniP2-J1 2 Schottky barrier diode for high frequency rectification.
Discontinued.
PS 2SD0814
Grade R (185~330)
Panasonic SC-59
SC-59A
TO-236
Mini Type(3-pin) 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PS 2SD1511
Grade S (16000~40000)
Panasonic SC-62 MiniP3-F1 3 NPN transistor for low voltage power amp.
Discontinued.
Alternative the DSC7Q01
PS 2SD1511G
Grade S (16000~40000)
Panasonic SC-62 MiniP3-F2 3 NPN transistor for low voltage power amp.
Discontinued.
Alternative the DSC7Q01
PS 2SD1821
Grade S (185~330)
Panasonic SC-70 SMini3-G1 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PS 2SD2240
Grade S (185~330)
Panasonic SC-75 SSMini3-G1 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PS 2SD2240G
Grade S (185~330)
Panasonic SC-89 SSMini3-F3 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
PS 2SD2240J
Grade S (185~330)
Panasonic SC-89
SOT-490
SSMini3-F1 3 NPN transistor for high voltage resistance low frequency low noise amp.
Discontinued.
Complementary to 2SB1463J
PS RUF015N02 ROHM - TUMT3 3 1.8V drive N-ch MOS FET for switching.
PS RW1C015UN ROHM - WEMT6 6 1.5V drive N-ch MOS FET for switching.
PS
SSM6J213FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)
6 P-ch MOS FET for power management application.
PT
SSM6J214FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)
6 P-ch MOS FET for power management application.
PU RTQ020N05 ROHM - TSMT6 6 2.5V drive N-ch MOS FET for switching.
PU DZ2J110
Grade M (Vz=10.73~11.28)
Panasonic - SMini2-F5-B 2 Zener diode series for constant voltage.
waveform clipper and surge absorption.
Low noise type.
PU DZ2S110
Grade M (Vz=10.73~11.28)
Panasonic - SSMini2-F5-B 2 Zener diode series for constant voltage.
waveform clipper and surge absorption.
Low noise type.
PV RTR030N05 ROHM - TSMT3 3 2.5V drive N-ch MOS FET for switching.
pV0 **
or
WV0 **
or
-V0 **
or
tV0 **
BAV23A NXP -
TO-236AB
(JEDEC)
SOT23 3 Dual high-voltage switching diodes.
pV3 ** BAT54A NXP -
TO-236AB (JEDEC)
SOT23 3 Schottky barrier diode.
pV4 ** BAT54S NXP -
TO-236AB (JEDEC)
SOT23 3 Schottky barrier diode.
pV5 **
or
-V5 **
or
WV5 **
or
tV5 **
BAV23S NXP -
TO-236AB
(JEDEC)
SOT23 3 Dual high-voltage switching diodes.
pV9 **
or
-V9 **
or
WV9 **
or
tV9 **
BAV23C NXP -
TO-236AB
(JEDEC)
SOT23 3 Dual high-voltage switching diodes.
PW RTR025N05 ROHM - TSMT3 3 2.5V drive N-ch MOS FET for switching.
pW1 ** BAT54C NXP -
TO-236AB (JEDEC)
SOT23 3 Schottky barrier diode.
PX RSQ015N06 ROHM - TSMT6 6 4V drive N-ch MOS FET for switching.
PX SSM3J36MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)
3 P-ch MOS FET for power management switch applications.
PY RSR030N06 ROHM - TSMT3 3 4V drive N-ch MOS FET for switching.
PY SSM3J56MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)
3 P-ch MOS FET for load switching application.
P*|Y
or
(P|Y)
2SC2884
Grade Y(160~320)
TOSHIBA SC-62
SOT-89
PW-Mini(4.6 x 4.2)
(2-5K1A)
3(4) Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1204.
P*Y
or
(PY)
2SC2884
Grade Y(160~320)
TOSHIBA SC-62
SOT-89
PW-Mini(4.6 x 4.2)
(2-5K1A)
3(4) Bipolar NPN transistor for low frequency amp.
Complementary to 2SA1204.
PZ RSR020N06 ROHM - TSMT3 3 4V drive N-ch MOS FET for switching.
PZ SSM3J35FS TOSHIBA - SSM(1.6 x 1.6)
(2-2H1B)
3 P-ch MOS FET for high speed switching.
PZ SSM3J35MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)
3 P-ch MOS FET for high speed switching.
PZ SSM3J35MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)
3 P-ch MOS FET for high speed switching.
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最終更新:2022年08月09日 13:17